DETAILED NOTES ON GERMANIUM

≤ 0.fifteen) is epitaxially developed on the SOI substrate. A thinner layer of Si is developed on this SiGe layer, and then the framework is cycled as a result of oxidizing and annealing levels. As a result of preferential oxidation of Si more than Ge [sixty eight], the first Si1–Germanium was one of The weather whose existence was predicted in